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Method for Fabricating Self Aligned Contacts On Double Diffused PNP And NPN Bipolar Structures

IP.com Disclosure Number: IPCOM000041062D
Original Publication Date: 1987-Jun-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Bergeron, DL Harper, B [+details]

Abstract

A method is reported for reducing photolithographic mask requirements and achieving a higher bipolar device performance by integrating a contact process sequence for double diffused (DD) PNP's and NPN's into an existing process.