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Hot electron threshold shift is used to program a compare circuit which can be used, for instance, to eliminate need for laser fuse blowing to access redundant circuits.
English (United States)
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Programmable Compare Circuit
Hot electron threshold shift is used to program a compare circuit which can
be used, for instance, to eliminate need for laser fuse blowing to access
A programmable compare circuit is shown in the figure wherein hot electrons
may be trapped in gate insulation of either transistor T1 or T2 during a
programming cycle to cause increased threshold voltage in one transistor. For
example, by applying a high voltage VH to line D, then raising and lowering the
potential on the write line W, node A is raised to VH, the gates of transistors T1
and T3 are at VH and electrons become trapped in their gate insulation. The
electrons are made available by forward biasing a nearby P-N junction that acts
as an injector. This diode is only powered during the programming phase. Thus,
the latch circuit L is programmed to power on in a preferred state. In this
example, wherein the threshold voltage (Vt) of transistors T1 and T3 has been
raised by trapping electrons in their gate insulation, transistors T2 and T4 will turn
on first during power up, thus bringing node A to ground and node B to VH .
In a compare cycle, line D or D(C) goes to VH and line W remains low. The
compare cycle state of node C depends on the state programmed into the latch
and the state of data line D and its complement, D(C), as shown in the truth table