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Bipolar Transistors With a High Mobility Base

IP.com Disclosure Number: IPCOM000041198D
Original Publication Date: 1987-Nov-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Chu, WK Michel, AE [+details]

Abstract

A technique is described whereby the operational performance of bipolar NPN transistors is increased through the incorporation of controlled impurities into the base region of the transistor. Elements, such as germanium and boron, introduced into the base region of the transistor under controlled conditions, decrease the base resistance and the base transit time of the conductive carriers. The result is an improved operational performance of the transistor.