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Planar Self-aligned Trench Cap

IP.com Disclosure Number: IPCOM000041212D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02

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Koburger, CW [+details]


A planar insulating cap is formed over a trench filled with polysilicon by first forming a silicon dioxide (SiO2) film which is etched away and then forming a final SiO2 film.