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Browse Prior Art Database

Alumina Deposition Process

IP.com Disclosure Number: IPCOM000041245D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Oldakowski, CC Reith, TM [+details]

Abstract

The "grain" in sputter-deposited alumina thin films can be consistently avoided by beginning the deposition at an appropriately high cathode-to-anode voltage ratio so as to deposit a thin layer of the alumina without excessive disruption of any residual substrate contamination. After the initial layer is deposited, a lower voltage ratio is used for the remaining majority of the deposition to produce the smooth and dense alumina films required.