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Tungsten Evaporation With Ion Enhancement

IP.com Disclosure Number: IPCOM000041251D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02

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Floro, JA Joshi, RV Nguyen, TN [+details]


Tungsten evaporated onto thermally oxidized silicon substrates during concurrent ion bombardment produces films having a high deposition rate and low stress that minimize or eliminate oxide damage, thus masking the metal with its 4.8eV work function attractive for midgap gates.