Dismiss
The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Tungsten Evaporation With Ion Enhancement

IP.com Disclosure Number: IPCOM000041251D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Floro, JA Joshi, RV Nguyen, TN [+details]

Abstract

Tungsten evaporated onto thermally oxidized silicon substrates during concurrent ion bombardment produces films having a high deposition rate and low stress that minimize or eliminate oxide damage, thus masking the metal with its 4.8eV work function attractive for midgap gates.