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Production of Buried Conducting Layer in Single Crystal Semiconductor Disclosure Number: IPCOM000041252D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02

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Clark, GJ Madakson, P Baglin, JE [+details]


There is a growing interest in producing 3D device structures. Presently attempts are made to do this by growing epi-layers on substrates using molecular beam epitaxy (MBE) and chemical vapor deposition (CVD). These processes cause a variety of fabrication problems; e.g., slow multi-step processes, interfacial impurity and defect problems, lack of epitaxial growth, diffusion problems during high temperature treatment etc.