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Plasma-Induced Hardening of Photoresists - Various Gases

IP.com Disclosure Number: IPCOM000041277D
Original Publication Date: 1984-Jan-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Johnson, C Wilbarg, RR [+details]

Abstract

It has previously been reported that treating photoresist in plasma systems using oxygen and CF4, respectively, hardens the resist such that, coupled with a subsequent high temperature bake, the resist is stabilized for ion implantation and for reactive ion etching. It has been found that the following gases are effective agents for performing hardening of photoresists: argon, helium, CHF3, CCl2F2, C2F6, C3F8, neon, SF6 and hydrogen. Various mixtures of these gases should also be effective in producing hardening. For hardening, CF4+H2 and Cl+Ar have been found to be effective. The results achieved were replicated using resists, such as Shipley AZ 1350J resist. The primary difference between these two techniques is the shape of the resist pattern following the post bake.