Original Publication Date: 1984-Jan-01
Included in the Prior Art Database: 2005-Feb-02
A passivation structure which includes a polyimide insulator disposed over a semiconductor substrate having two spaced-apart P regions with an N- region interposed therebetween includes a conductive metal layer interposed between the polyimide insulator and the surface of the N- region to prevent surface inversion of the N- region and, thus, avoid leakage between the two P regions. The conductive metal layer is biased at the potential of the N- region. As shown in the figure, a semiconductor substrate 10 includes a P region 12, an N- region 14, generally epitaxially grown on P region 12, an N+ subcollector region 16, a P region 18 formed as an isolation region, and an active device P region 20.