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Reduction of Contamination in a Czochralski Process Disclosure Number: IPCOM000041498D
Original Publication Date: 1984-Feb-01
Included in the Prior Art Database: 2005-Feb-02

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Murgai, A [+details]


Contamination of the crystal grown in a Czochralski process may be reduced by providing a directed flow of inert gas and a contaminant shield to protect the crystal and melt from the contaminant sources. In the drawing, crystal 10 is pulled from the melt 11 by the conventional combined linear and rotating movement. The melt 11 is confined in the crucible 12 heated by means of an annular heater 13 surrounded by insulation 14. The crucible is supported for rotation and elevation by means of pedestal 15 and shaft 16, leading out of the furnace enclosure 17. A high purity "eliminator reservoir" 18 effectively lines the crucible 12 to provide a reservoir for the melt to prevent contamination of the melt from the crucible.