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Ablative Photodecomposition Process for Repair of Line Shorts

IP.com Disclosure Number: IPCOM000041585D
Original Publication Date: 1984-Feb-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Klein, DL Leary-Renick, PA Srinivasan, R [+details]

Abstract

A technique is known for the fabrication of devices and circuits using multiple layers of materials, where patterned layers of resists are required to make the device or circuit. The fabrication process is characterized by the selective removal of portions of the resist layer by ablative photodecomposition (APD). This decomposition is caused by the incidence of ultraviolet radiation of wavelengths less than 220 nm, and power densities sufficient to cause fragmentation of resist polymer chains and the immediate escape of the fragmented portions from the resist layer. Energy fluences in excess of 10 mJ/cm2/pulse are typically required. The deliverance of a large amount of energy in this wavelength range to the resist layer in a sufficiently short amount of time causes ablation of the polymer chain fragments.