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Inorganic Lift-Off Process

IP.com Disclosure Number: IPCOM000041912D
Original Publication Date: 1984-Mar-01
Included in the Prior Art Database: 2005-Feb-03

Publishing Venue

IBM

Related People

Authors:
Raacke, KH Roberts, S [+details]

Abstract

This article describes a process for patterning using polysilicon as a lift-off mask. Among the advantages of this process over processes using conventional lift-off masks is the elimination of the organic contamination of the depositing insulating film and the film substrate interface, caused by the sputtered impurities of the photoresist. The process includes the following steps described with reference to Figs. 1 - 3: 1. Forming on a semiconductor substrate 10 a layer of an etching barrier material 12, such as, for example, a silicon dioxide or a silicon nitride layer, having a thickness of about 10 nm. 2. Depositing (through a conventional CVD (chemical vapor deposition) or LPCVD (low pressure chemical vapor deposition) process 1.0 to 1.5 mm of intrinsic polysilicon 14. 3.