Direct-Sealed Multi-Chip Module
Original Publication Date: 1984-Mar-01
Included in the Prior Art Database: 2005-Feb-03
This sealing arrangement is an improvement on the hermetic sealing arrangement described in the IBM Technical Disclosure Bulletin 24, 1759 (August 1981). In this improved structure, the ground surface 10 on substrate 12 that abuts sealing element 14 is provided with a soft, low-melting-point metal reflowed to the substrate. Typically, the low-melting-point metal is indium or indium alloy. The sealing alloy could be deposited on surface 10 in the form of a preform and subsequently reflowed to form a thin ductal metal surface. The effect of the reflowed metal is to fill in all ceramic roughness, including voids, microcracks, etc., to provide a soft ductal smooth surface for the C-ring seal or the equivalent mating surface.