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ENHANCED STORAGE DYNAMIC CELL USING COMPOSITE SILICON-RICH SiO2 AND THERMAL SiO2 LAYERS

IP.com Disclosure Number: IPCOM000041978D
Original Publication Date: 1984-Mar-01
Included in the Prior Art Database: 2005-Feb-03

Publishing Venue

IBM

Related People

Authors:
DiMaria, DJ Fang, FF Lai, SK [+details]

Abstract

This article relates generally to one-device memory cells and more particularly to an enhanced storage dynamic FET memory cell using a composite silicon-rich silicon dioxide and thermal silicon dioxide layers in its storage capacitor. A dynamic memory cell using Si-rich SiO2 and pure SiO2 composite layers for storage capacitors is disclosed whose storage capacitance is enhanced by injection of electrons into and out of the Si-rich oxide with respect to the counter electrode (field plate). Furthermore, the dielectric strength of the underlying SiO2 (adjacent to Si substrate) is significantly improved because of the Si-rich SiO2 . For an appropriate composition of Si-rich SiO2, the process is reversible and rapid. Hence, it allows charge storage enhancement by virtue of an increased effective field across the pure SiO21ayer.