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FORMATION OF THERMALLY STABLE Ta2O5 FILMS

IP.com Disclosure Number: IPCOM000042040D
Original Publication Date: 1984-Mar-01
Included in the Prior Art Database: 2005-Feb-03

Publishing Venue

IBM

Related People

Authors:
Dishon, G Reisman, A Ting, CY [+details]

Abstract

This article describes processes for the formation of thin Ta2O5 films with excellent thermal stability and low leakage characteristics which can be formed even on silicon substrates. For dynamic random-access memory (RAM) and other capacitor applications, it would be highly desirable for many reasons to have available a high capacitance density technology based on the use of high dielectric constant materials as opposed to simply decreasing film thicknesses. One such obvious material is Ta2O5 which has been used extensively for thick film applications. Its use in thin film applications, e.g., storage capacitor in a FET (DRAM) has been hampered by the tendency for reaction with the underlying silicon, and instability when subjected to temperatures above 500ŒC or so.