Laser-Induced Chemical Etching of Kerf for Multi-Level Metal Processing Sequence
Original Publication Date: 1984-Mar-01
Included in the Prior Art Database: 2005-Feb-03
A system is described wherein rapid removal of material in the kerf area of a semiconductor wafer may be accomplished. This process is useful in multi-level metal wiring schemes where it is desired to fill these resulting features with a passivating material, such as silicon nitride, prior to dicing the wafer into individual integrated circuit chips. Otherwise, edges of the inter-level dielectric material, which may be an organic such as polyimide, would be exposed to the environment. As shown in the figure, a semiconductor wafer 1, upon which a multi-level wiring structure has been fabricated, is located on a fixture 2 inside a vacuum chamber 3. The fixture has an "X-Y" movement feature so that the location of the laser light impingement "S" may be varied over the entire surface of the substrate.