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Browse Prior Art Database

Negative Resistance, High Frequency Device

IP.com Disclosure Number: IPCOM000042166D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03

Publishing Venue

IBM

Related People

Authors:
Tiwari, S [+details]

Abstract

A negative resistance, high frequency device employs a transit time based negative resistance based on thermionic injection or diffusion followed by drift across a high field. The thermionic injection over a barrier is controllable by changing the barrier height with a control voltage. The device thus has three terminals with a controllable barrier. The n region thickness is chosen to provide the optimal transit time delay to cause oscillations at a given frequency due to negative resistance. Two schematic structures illustrative of the principle are shown in Figs. 1 and 2. The dimension t is chosen so that under zero gate or control voltage, the region between gate segments is essentially depleted of carriers.