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Double Catcher Plates in the Reactive Ion Etching

IP.com Disclosure Number: IPCOM000042207D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03

Publishing Venue

IBM

Related People

Authors:
Lee, YH Petrillo, EJ [+details]

Abstract

This article relates generally to reactive ion etching (RIE) systems and more particularly to such systems wherein radial etching uniformity is enhanced by the addition of a second perforated catcher plate. This article shows that a known catcher plate "lacing" technique may be replaced with another catcher plate to the prior-art system. This approach provides a rather simple and easy way to control the etch uniformity of semiconductor wafers for any plasma condition. A second perforated plate is positioned over the first one, as shown in Fig. 1. Etch uniformity is controlled by adjusting spacing h between the two plates. It is most important that the first plate has a solid sidewall and that the second plate has no sidewall.