Browse Prior Art Database

Soliton Ndro Memory Cell

IP.com Disclosure Number: IPCOM000042209D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03

Publishing Venue

IBM

Related People

Authors:
Rajeevakumar, TV Zappe, HH [+details]

Abstract

Flux tubes related closely to storage elements in a soliton memory are arranged to provide nondestructive readout by trapping selectively, in the absence of control current, the related flux quanta. A soliton memory cell with wide operating margins is shown in Fig. 1A. Fig. 1B is a chart of the phase difference c versus energy potential. Fig. 1C is a chart of bit values. The storage cell includes a flux tube in which the inductance L0 is large enough to trap at least one flux quantum in the absence of control current I. The cell is shown schematically in Fig. 2. Each cell in the array is composed of two array lines x1, x2 carrying control currents, two lines composed of shooters y1, y2, a flux tube (b cell) and a storage element (a cell). To write a "1", x1 and x2 are applied and a soliton is injected into y1 .