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Gas Phase Surface Incorporation Techniques for the Preparation of Surface Level Metallic Contamination Standards

IP.com Disclosure Number: IPCOM000042250D
Publication Date: 2005-Feb-03

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that uses gas phase surface incorporation (GAPSINC) techniques; this method uses dry gas phase plasma systems to produce surface-level metallic contamination standards over any substrate material. Benefits include producing wafers with good uniformity, a wide range of density levels, and a longer shelf life.