Plasmon Inhibiting Hot Electron Transistor
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03
In ballistic or hot electron transistors an improvement is provided in the form of a structure wherein the energy conditions are such that the plasmon energy Ep plus the Fermi energy Ef is greater than the electron injection energy. The device is constructed using materials such as tin for doping and GaAlAs for the barriers. A structure and energy diagram is shown in the figure.