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Three-Layer Electron-Beam Resist With High Sensitivity and Contrast Disclosure Number: IPCOM000042347D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03

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Gregor, LV Wise, JG [+details]


Described here is a high-resolution, high-sensitivity electron beam resist for direct pattern generation or mask fabrication. The resist comprises a three-layer structure of: 1. A base layer for planarization and process stability, such as about 1.5 u polysulfone; 2. A barrier layer for image transfer, such as about 0.1 u silicon oxide (CVD); 3. An image layer of about 0.4 to about 0.7 u of polyfluorinated butyl methacrylate (FBM), as available from Orlex Corp. The structure is shown in the drawing.