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High Purity Refractory-Metal Silicide Target

IP.com Disclosure Number: IPCOM000042358D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03

Publishing Venue

IBM

Related People

Authors:
Ahn, KY Herd, SR Tu, KN [+details]

Abstract

Thin film deposition of alloys by sputtering has often been difficult because the type of target used in the sputtering system would not provide a wide and accurately reproducible range of alloy depositions. This has been the situation when alloyed targets have been used and when sintered powder metallurgy has been used for the targets. In particular, the use of sintered powder metallurgy for refractory-metal silicide films has suffered from an excessive oxygen uptake which resulted in impure metal silicide deposits. To solve this problem, an improved target is used. The target is comprised of a solid silicon layer 10 into which a large number of recesses 12 have been drilled. These recesses are filled with small rods of refractory metal, such as W, Ti, Ta, Nb, etc.