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Novel Solvent System for the Removal of Hardened Photoresists

IP.com Disclosure Number: IPCOM000042429D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03

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Related People

Linde, H Murphy, E Poley, D [+details]


Plasma-hardened, baked, positive photoresist structures have been proposed for producing undistorted masking in a variety of photolithographic applications, since such hardened photoresists improve resolution of metal lines at the higher temperatures required during metal deposition. However, although these resist structures provide improved flow resistance, they are not readily removed by conventional methods and solvents. This article teaches a formulation and use of a unique solvent system that easily removes such thermally and/or plasma-hardened photoresists from a substrate. It consists of soaking the hardened photoresist-coated substrate in a solution of pyridine and dimethyl sulfoxide in a ratio of 10 to 1:2 (pyridine:dimethyl sulfoxide).