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Laser-Addressable Metal Connections

IP.com Disclosure Number: IPCOM000042468D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-03

Publishing Venue

IBM

Related People

Authors:
Kinney, WI Lasky, JB [+details]

Abstract

A method is provided for selectively producing electrical connections in semiconductor devices after metallization is completed. Connections can be made at specially prepared sites either within one level or between different levels of metal to implement circuit design iterations or to select among redundant connections following the electrical test of the devices. This is accomplished by providing conductive lines to be isolated using intrinsic amorphous silicon at certain preselected locations, where an electrical connection may be needed. When an electrical connection between the lines is needed, pulsed energy from a laser is directed towards the amorphous silicon between the conductive lines causing the silicon to melt and interdiffuse with the metal (i.e.