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Amorphous/Polycrystalline Diamond Film Deposition

IP.com Disclosure Number: IPCOM000042527D
Original Publication Date: 1984-May-01
Included in the Prior Art Database: 2005-Feb-04

Publishing Venue

IBM

Related People

Authors:
Green, DC Meyerson, BS Plecenik, RM Reimer, JA Scott, BA [+details]

Abstract

Polycrystalline or amorphous diamond films have advantageous physical and chemical properties, including extreme hardness, chemical inertness, and superior insulating/dielectric behavior. Most attempts at preparing such films have used either carbon ion beam deposition or hydrocarbon plasma decomposition methods. Amorphous diamond, however, has not found use as an electronic material, because these deposition methods do not produce the highest degree of fourfold coordinated carbon (plasma techniques) or are impractical as a deposition method for the rapid, large-area deposition of films (ion beams). To solve these problems, a new method of preparing amorphous diamond (a-diamond) is described. Amorphous diamond is produced through the generation and reaction of methylene species having C-X bonds, where X=H, F, Cl, Br, I.