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Lateral Passivation by Double Lift-Off

IP.com Disclosure Number: IPCOM000042619D
Original Publication Date: 1984-Jun-01
Included in the Prior Art Database: 2005-Feb-04

Publishing Venue

IBM

Related People

Authors:
Iyer, SS Ting, CY [+details]

Abstract

This article relates generally to passivation techniques used in integrated circuit fabrication and more particularly to the passivation of a corrodible material including the edges thereof with a non-corrodible material. Metallization films on electronic circuits (semiconductor or otherwise) are subjected to various ambient gases, such as moisture, etc., which act to corrode the metal film both during processing and during their lifetime. Some metals have the ability for self-passiva- tion whereby a native oxide forms rapidly in a self-limiting manner and acts as a protective layer. This is most desirable, and is seen in metals such as Ti and A1. Metals such as copper, however, do not exhibit such a protective mechanism and need to be coated to passivate them.