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Influence of Chlorobenzene Water Content on Photoresist Soak Process

IP.com Disclosure Number: IPCOM000042766D
Original Publication Date: 1984-Jun-01
Included in the Prior Art Database: 2005-Feb-04

Publishing Venue

IBM

Related People

Authors:
Gauss, G Schneider, R [+details]

Abstract

This process is improved by limiting the water content of chlorobenzene to below 120 ppm. In a single-step lift-off process (Figs. 1A - 1F) for forming conductor patterns of aluminum (Fig. 1F), the surface of the baked and exposed photoresist layer (Fig. 1B) is soaked in chlorobenzene (Fig. 1C) which increases the resistance of the photoresist to subsequent developer attack over untreated photoresist. By means of this process, a negative slope of the developed photoresist structure (Fig. 1D) is obtained. It has been found that with chlorobenzene batches having a water content of up to 170 to 180 ppm, the process times for soaking and development substantially influence the negative slope of the resist structure.