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Method for Growing Ultra-Thin Insulating Layers on Metal or Silicide Films at Low Temperatures Disclosure Number: IPCOM000043118D
Original Publication Date: 1984-Jul-01
Included in the Prior Art Database: 2005-Feb-04

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Cros, AM Pollak, RA Tu, KN [+details]


This article relates to the growth of thin, homogeneous oxide films on metal or silicides. The oxidation of silicon atoms in a metal-rich environment can proceed at very low temperatures in contrast to pure silicon which requires higher temperatures to oxidize to the same degree. Thus, a new process to grow silicon oxide on metal films is provided as described hereinbelow. Step 1: Fabricate a metal-rich silicide by shallow implantation of silicon atoms into the metallic substrate 10 (Fig. 1A) or, alternatively, by depositing a thin silicon film onto a metal substrate 10 (Fig. 2A) which, upon annealing, will produce a metal-rich silicide phase (Fig. 2B).