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Borosilicate Glass Trench Fill

IP.com Disclosure Number: IPCOM000043163D
Original Publication Date: 1984-Jul-01
Included in the Prior Art Database: 2005-Feb-04

Publishing Venue

IBM

Related People

Authors:
Beyer, KD Pliskin, WA [+details]

Abstract

The implementation of borosilicate with a low sodium content leads to a new method of introducing a substrate contact. As shown in Fig. 1, after the timed RIE (reactive ion etch) of the SiO2/Si3N4 lining at the bottom of the trench, a boron-doped polysilicon layer can be deposited over the trench structure. The thickness of the polysilicon layer is not critical because the thermal expansion coefficient of polysilicon matches that of silicon.