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Fabrication of Superconductive Transistors

IP.com Disclosure Number: IPCOM000043170D
Original Publication Date: 1984-Jul-01
Included in the Prior Art Database: 2005-Feb-04

Publishing Venue

IBM

Related People

Authors:
Cuomo, J Davidson, A Speidell, J [+details]

Abstract

A three-terminal superconducting transistor can be made by the fabrication of a superconductor semimetal superconductor sandwich wherein current is electronically injected to introduce either electrons or holes for altering the energy barrier height of the semimetal. To the extent that the energy barrier height is changed, the RNN of the device changes radically. Without injected carriers the resistance is high, but with injected carriers the resistance is low. This is an inverting device having nonlatching characteristics. This article describes simple processing techniques using vacuum evaporation and photolithography for fast and inexpensive fabrication of the superconducting transistor.