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Browse Prior Art Database

Glass Trench Fill in High Pressure Ambients

IP.com Disclosure Number: IPCOM000043219D
Original Publication Date: 1984-Jul-01
Included in the Prior Art Database: 2005-Feb-04

Publishing Venue

IBM

Related People

Authors:
Beyer, KD Pliskin, WA Riseman, J [+details]

Abstract

Glass-filled trenches or grooves may be formed in semiconductor structures to act as isolation regions between semiconductor devices. The trench dimensions are, for example, a width of between about 1 to 4 mm and a depth of up to about 6 mm. The glass may be deposited onto the semiconductor surface having trenches by the sedimentation, centrifugation or spin-on of colloidal glass particles and followed by a heating step to coalesce the particles into a glass layer. Alternatively, the glass layer may be formed directly by sputtering, evaporation or chemical vapor deposition onto the semiconductor surface having the trenches. The trenches will not be completely filled after the initial deposition steps where the trench width is small.