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Fabrication of Schottky Devices on P-Type Silicon Using Ion Beam Etching

IP.com Disclosure Number: IPCOM000043277D
Original Publication Date: 1984-Aug-01
Included in the Prior Art Database: 2005-Feb-04

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Auret, FD Bojarczuk, NA Paz, O [+details]


A process has been demonstrated for fabricating good quality Schottky devices with molybdenum (Mo) metallurgy on p-type silicon. The process includes argon ion beam sputter etching the silicon surface prior to Schottky metallization. The p-type wafers were cleaned by standard chemical techniques and then sputter etched in a vacuum using a Kaufman ion source. The sputter etching voltages used in the ion source ranged from 500 to 1500 VDC with corresponding beam currents of .1 ma/cm2 to 1 ma/cm2 . Etching times were from one-half to 5 minutes. After etching, Schottky Mo metallization was immediately deposited by secondary ion beam deposition. The deposition conditions were: beam voltage 1500 VDC, beam current 2.5 ma/cm2, deposition rate .