Electrostatic Discharge Protection Device in Deep Trench Isolation Structure
Original Publication Date: 1984-Aug-01
Included in the Prior Art Database: 2005-Feb-04
Electrostatic discharge protection is afforded bipolar semiconductor devices, which are connected to chip input pads, by provision of a discharge path which uses pre-existing p-n junctions, such as a subcollector-substrate junction and a resistor p-n junction. The technique is particularly applicable to deep isolation trench chip structures. The electrostatic discharge (ESD) protection circuit shown in Fig. 1 eliminates damage caused by destructive transient voltage applied to the primary input. The circuit comprises two diodes 1 and 2, stability resistor 3 and resistor 4, and protects against both positive and negative polarities of input voltage transients. When a positive polarity of transient voltage of magnitude .