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PHOTOCONDUCTING PULSE GENERATOR OF GaAs WITH PICOSECOND RESPONSE

IP.com Disclosure Number: IPCOM000043338D
Original Publication Date: 1984-Aug-01
Included in the Prior Art Database: 2005-Feb-04

Publishing Venue

IBM

Related People

Authors:
Kash, JA [+details]

Abstract

In measuring the response of ultrafast electronic devices, the principal difficulty is the propagation of the picosecond electrical pulses from the pulse generating photoconductor to the device under study, and from there to the sampling photoconductor. A monolithic approach in which the photoconductive elements are fabricated on the same substrate as the device to be tested will eliminate the difficulties inherent in the propagation of picosecond electrical pulses through discrete circuit elements. The fastest devices now fabricated are produced using GaAs and GaAlAs made by molecular beam epitaxy (MBE). The photoconductive pulse generator is shown in the figure, and the photoconductive sampler is identical thereto except for the electrical connections, as are described in the figure caption.