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Hybrid Ash NMP Photoresist Strip Process for Use With Perfluorinated Resist

IP.com Disclosure Number: IPCOM000043547D
Original Publication Date: 1984-Sep-01
Included in the Prior Art Database: 2005-Feb-05

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Related People

Geffken, RM Holland, KL Kita, JE Matthews, DJ [+details]


The hybrid ash NMP (N-methyl pyrrolidone) strip process utilizes a partial ash of the photoresist to remove the fluorinated resist layer, followed by a wet strip of the remaining photoresist. The wafer surface is not exposed to the oxygen ash or to concentrated, non-volatile components from the resist. The process consists of the following steps: 1. Ash 2. NMP resist strip at 70ŒC 3. DI rinse 4. Centrifuge dry The ash process conditions must be defined so that an adequate removal rate of the fluorinated resist is obtained without heating the photoresist to such a high temperature (>130 C) that it cannot be removed by the NMP at 70ŒC.