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Process for Forming Gate and Storage Node Dielectrics

IP.com Disclosure Number: IPCOM000043629D
Original Publication Date: 1984-Sep-01
Included in the Prior Art Database: 2005-Feb-05

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Koburger, CW Silverman, R White, FR Wursthorn, JM [+details]


The process described below makes possible the independent formation of oxidation barrier masking films and gate and storage node dielectrics in self-aligned multiple dielectric device structures. Many existing processes which use dual dielectric (nitride/oxide) films as an oxidation barrier masking structure, retain portions of those films for use as gate and storage node dielectrics. This dual application of the dielectric materials limits the designer's ability to optimize the resulting structure. Following is a sequence of process steps which together with Figs.