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Semiconductor Resistor

IP.com Disclosure Number: IPCOM000043651D
Original Publication Date: 1984-Sep-01
Included in the Prior Art Database: 2005-Feb-05

Publishing Venue

IBM

Related People

Authors:
Dahmen, M Heimeier, H Klink, E Zuehlke, R [+details]

Abstract

This article describes a semiconductor resistor, consisting of a stripe-formed resistor zone having contacts at both ends, the zone being formed by re-doping a corresponding region of a semiconductor layer. The specified semiconductor resistor is designed as P-resistor zone B in an N-epitaxial layer 2 applied on a P-substrate 1. Fig. 1 depicts the structure of the complete semiconductor resistor in a plan view. The effective width B' of the semiconductor resistor is determined by limitation zones A externally overlapping resistor zone B and being of the opposite conductivity type and of a higher absolute concentration. First, as shown by the sectional view I-II of the structure of Fig. 1 in Fig.