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Fabrication of Double-Poly DRAM Cell With Nitride-Oxide Composite Dielectric Storage Capacitor

IP.com Disclosure Number: IPCOM000043656D
Original Publication Date: 1984-Sep-01
Included in the Prior Art Database: 2005-Feb-05

Publishing Venue

IBM

Related People

Authors:
Chao, HH Hu, GJ [+details]

Abstract

This article relates generally to methods for fabricating double-poly one-device field-effect transistor memory cells and more particularly to a method for fabricating such cells with a composite nitride-oxide dielectric for its storage capacitor, which eliminates inter-poly shorting problems. In the past, one of the major problems encountered in a double-polysilicon MOS technology is that of inter-poly shorting. According to a recent publication [*], a new method can effectively circumvent this problem. However, the new method does not provide for a storage capacitor with a composite nitride-oxide dielectric stack. The following fabrication scheme described in conjunction with Figs.