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Energy Beam Enhanced MOCVD

IP.com Disclosure Number: IPCOM000043685D
Original Publication Date: 1984-Sep-01
Included in the Prior Art Database: 2005-Feb-05

Publishing Venue

IBM

Related People

Authors:
Graf, V [+details]

Abstract

A light or electron beam is used to selectively enhance the growth rate of epitaxial III/V semiconductor materials such as GaAs or GaAlAs. Metalorganic chemical vapor deposition (MOCVD) is known for its potential to grow epitaxial semiconducting layers in a product line environment. The substrates are RF heated to about 750"C, and for the Ga or Al sources TMG (trimethylgallium) or TMA (trimethylaluminum) is used. Irradiation of the substrate with an energy beam (photons or electrons) in the range of 0.05 to 1 J/cm2 suffices to enhance the epitaxial growth of the III/V material by a factor of up to 103 .By selectively illuminating the wafer, active materials can be grown to form a pattern determined by the illumination without any photoresist step, i.e., in a mask-less process.