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Elevated Temperature Ion Implantation

IP.com Disclosure Number: IPCOM000043745D
Original Publication Date: 1984-Sep-01
Included in the Prior Art Database: 2005-Feb-05

Publishing Venue

IBM

Related People

Authors:
Uyer, S Ting, C [+details]

Abstract

This article relates generally to the ion implantation of dopants and more particularly to ion implantation at high substrate temperatures to activate the implanted dopants and to minimize substrate damage which occurs during ion implantation. Shallow junction technology is a critical area in scaled semiconductor devices. Usually these junctions are formed by ion implantation at fairly low ion energies (typically several KeV) which implants the ions at very shallow depths. Unfortunately, very few of these ions are electrically active and a high temperature activation anneal (above 900ŒC) is required to activate the implanted dose. This step had deleterious effects on the junction profile in that the dopant diffuses considerably during annealing.