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Edge Superlattice Bloch Oscillator

IP.com Disclosure Number: IPCOM000043791D
Original Publication Date: 1984-Sep-01
Included in the Prior Art Database: 2005-Feb-05

Publishing Venue

IBM

Related People

Authors:
Chang, LL Esaki, L Stiles, PJ [+details]

Abstract

The possibility of negative-resistance and Bloch oscillation, while predicted theoretically, has eluded experimental verification because of the stringent requirement of a long electron mean free path or a long electron scattering time. An edge superlattice makes it possible to take advantage of the high mobility therein so as to achieve the high-frequency Bloch oscillation. Two configurations are shown in Figs. 1 and 2 where A is GaAs, B is Ga1xAlxAs, and C is Ga1-yAlyAs. The superlattice, with a typical period "d", which is the sum of the layer thickness of A and B, of 100 ˜ can be readily fabricated by molecular beam epitaxy. This structure is then either cleaved or angle-polished and etched and, on its edge, additional depositions are made. In Fig.