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Skirt Removal Process for Metal Lift-Off

IP.com Disclosure Number: IPCOM000043884D
Original Publication Date: 1984-Oct-01
Included in the Prior Art Database: 2005-Feb-05

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Dinklage, JB Hakey, MC [+details]


This article describes a process that uses a non-selective ion etch to remove the skirt that often forms between the bottom of the fabricated line and the resist pedestal when using the customary image reversal metal lift-off process. This process also rounds the sharp metal corners of the top of the fabricated line. The process uses a non-selective ion etch to remove the skirt 11 after the metal lift-off step. The skirt material would probably etch more rapidly than a metal line or semiconductor surface because it is likely to be a spongy, porous material. This would enhance the ability to control the etch process. A general surface cleaning of the metal and semiconductor surface would result in improved adhesion of subsequent films.