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ENHANCEMENT OF TERPOLYMER RESIST R/Ro THROUGH RESIST FILM SURFACE TREATMENT

IP.com Disclosure Number: IPCOM000044010D
Original Publication Date: 1984-Oct-01
Included in the Prior Art Database: 2005-Feb-05

Publishing Venue

IBM

Related People

Authors:
Lee, LC Sears, BA Wu, JF [+details]

Abstract

This article describes a process whereby the R/Ro of a terpolymer photoresist film is raised significantly by treatment with a metal ion solution. This increase in R/Ro is accompanied by a widening of the dry etch process window and the prevention of interlayer penetration in multilayer resist processes. Trace metal ions in the developer solution have been determined to be a cause of varying Ro . Undesirably low R/Ro in the terpolymer resist system is normally offset by stabilizing the effect of the metal ions by obtaining their removal from the developer through the use of a chelating agent. By use of resist surface treatment, the resist film Ro is virtually independent of the original material Ro, thereby simplifying manufacture of the polymer.