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Method of Utilizing the Channel Effect for Doping by Ion Implantation

IP.com Disclosure Number: IPCOM000044082D
Original Publication Date: 1984-Nov-01
Included in the Prior Art Database: 2005-Feb-05

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Elsner, G Hinkel, H Kempf, J [+details]


The angle dependence of the secondary ion sputter yield, resulting from ions being implanted into a substrate, is used to determine the channel direction. The ions employed for doping are implanted parallel to the channel axis. A secondary ion mass analyzer is integrated in the ion implanter. The angle dependence of the secondary ion yield is determined when ions are implanted into a substrate. The sputter yield is drastically reduced when the ions, impinging on the substrate surface, proceed exactly parallel to the channel axis. The substrate is fixed in the minimum yield position during ion implantation. With this method, using the known channel effect, ions are implanted deeply into the substrate at relatively low energies.