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Control of Etch Uniformity and Cathode Sputtering of Non-Volatile Materials in a RIE Dry Etch System

IP.com Disclosure Number: IPCOM000044132D
Original Publication Date: 1984-Nov-01
Included in the Prior Art Database: 2005-Feb-05

Publishing Venue

IBM

Related People

Authors:
Beardsley, GL Gray, PB [+details]

Abstract

A cathode design has been established to control the etch uniformity and cathode sputtering of non-volatile materials in a reactive ion etch (RIE) dry etch system. By using a templated cathode of various materials and electrically conducting inserts one can adjust the etch rate and uniformity of an individual wafer, eliminate or reduce sputtering of non-volatile materials from the cathode, reduce the load dependence and extend the lifetime of the cathode in a batch RIE dry etch tool. Individual wafer etch rate, within wafer uniformity and wafer to wafer uniformity can be adjusted by altering the electrically conducting inserts, as shown in Fig. 1. Possible insert adjustments to control wafer to wafer and within wafer etch uniformities (Fig.