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Spacer Formation on Electrodes With Non-Vertical Sidewalls

IP.com Disclosure Number: IPCOM000044195D
Original Publication Date: 1984-Nov-01
Included in the Prior Art Database: 2005-Feb-05

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Related People

Pan, PH White, FR [+details]


This article describes a method for forming sidewall spacers on electrodes that do not have vertical sidewalls. Processes for making double-implanted LDD (Lightly Doped Drain) structures have used different sidewall techniques to provide self-alignment for the p and n regions. Such techniques normally require vertical sidewalls on the defined electrodes which preclude the formation of LDD structures with processes where vertical sidewalls cannot be obtained. The following method makes possible the effective use of sidewall techniques to form LDD structures with spacers formed adjacent to electrodes having non-vertical sidewalls. The method includes the following steps described with reference to Figs. 1-5. In Fig.