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DIFFUSION BARRIER FOR PtSi/Si STRUCTURES

IP.com Disclosure Number: IPCOM000044309D
Original Publication Date: 1984-Dec-01
Included in the Prior Art Database: 2005-Feb-05

Publishing Venue

IBM

Related People

Authors:
Eizenberg, M Mayer, JW Tu, KN [+details]

Abstract

Platinum silicide forms a high barrier height Schottky barrier diode to silicon, and aluminum is used as a low resistance metallization. During conventional heat treatment (sintering) of the Al/PtSi/Si structure at temperatures around 450ŒC, penetration of Al into PtSi occurs and, after a longer time, Al can penetrate into the interface between PtSi and Si. This reduces the barrier height. In order to overcome this problem, diffusion barriers, such as TiW, CrOx, or TiNx, are deposited between the PtSi layer and the Al layer.