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Formation of Silicon-Oxide-Silicon Structures

IP.com Disclosure Number: IPCOM000044349D
Original Publication Date: 1984-Dec-01
Included in the Prior Art Database: 2005-Feb-05

Publishing Venue

IBM

Related People

Authors:
Silvestri, VJ [+details]

Abstract

A process is described and shown in the drawings for forming silicon areas on a silicon dioxide layer 10 over a silicon substrate 12. The steps of the method include (Fig. 1A) opening holes 14 in the silicon dioxide layer 10 (using known techniques) and epitaxially depositing silicon 16 in the holes and allowing the silicon to overgrow the oxide significantly (using known techniques). In Fig. 1B, oxidizing the structure so that the silicon deposited up through the hole is partially consumed. As a result of this oxidation, the epitaxial silicon through the holes as well as the outer portions of the overgrowth is such that the remaining epitaxial silicon 16 is contained inside the silicon dioxide 18. In Fig.