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Optical Determination of Crystal Axis Orientation in Silicon Fragments or Devices

IP.com Disclosure Number: IPCOM000044371D
Original Publication Date: 1984-Dec-01
Included in the Prior Art Database: 2005-Feb-05

Publishing Venue

IBM

Related People

Authors:
Gajda, JJ Needham, CD [+details]

Abstract

In this method the axis orientation of a monocrystalline silicon object is determined by measuring the intensity of the 1-phonon band at 523 cm in the Raman effect, using polarized incident radiation. In a device or silicon fragment where the alignment of the (110) axis is unknown, X-ray diffraction is normally used to determine the alignment. This is a slow method, requiring a trained specialist to make measurements. Referring now to the figure, there is shown a schematic illustration of the apparatus used to make the optical determination. The sample to be analyzed is placed on microscope stage 10, supported on an x-y translating table 13, and the area of interest is positioned with white light illumination obtained from source 12.